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Transistor-level design and characterization in ASAP7 7nm FinFET: a dual-Vt domino AND8 (11% leakage reduction) and 6T vs 8T SRAM bitcells across read, write, and hold. Includes a measurement-setup discrepancy found in the original decks.
Open research toward model-specific mask-ROM LLM inference silicon: analytical studies, an ABI 3.0 compiler/runtime and cycle model, synthesizable RTL, and open-PDK physical evidence — gated against itself by a 19-rung board that is deliberately mostly red.